Abstract
Gallium oxide (Ga2O3) thin film was deposited on n-Si (100) substrate using electron beam evaporation technique. Deposited thin film was annealed at 900 °C with oxygen flow at rate 200 ml/minute for 30 min in a tabular furnace. Thereafter, Ag9+ ion irradiated with with ion fluence (Φ) of 1E11, 5E11, 1E12 and 5E12 ions/cm2. The crystallographic structure of pristine and irradiated sample was studied. Presence of (004) (−401), (202), (−112), and (−601) planes implies presence of monoclinic (β) polycrystalline phase of Ga2O3. The average crystallite size decreases from ∼ 13.6 nm for pristine (Φ = 0 to ∼ 8.1 nm for the thin film irradiated at Φ = 5E12 ions/cm2. With increasing Φ a reduction in peak intensity and rise in peak width (FWHM) from 0.60 for pristine (Φ = 0) to 0.93 (in degree) for Φ = 5E12 ions/cm2 of the XRD peaks has been observed. The obtained response can be elucidated on the basis of introduction of defects in thin film as outcome of deposition of ion-energy which happens mainly in the form of electronic energy loss (Se).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
