RETRACTED ARTICLE: Modeling and design of Magnetic Tunneling Junction using MoS2/graphene quantum dots/MoS2 approach

Abstract

Spintronics is a novel field of research technique used to control the electron spin on the spin-dependent current. From that the Magnetic Tunneling Junction (MTJ) based spintronics plays a significant role because of its extensive application, namely, great scalability, high write speed, and huge relative magnetoresistance. Nevertheless, there is a problem in the fabrication of spintronics-based MTJ devices. Hence, in this paper, a novel efficient approach of MTJ structure is designed to meet the objective of the devices. Therefore, molybdenum disulfide (MoS2)/graphene quantum dots (GQDs)/MoS2 based MTJ structure design is developed for better efficiency with low power consumption. The two-dimensional MoS2 acts as ferromagnetic electrodes in MTJ due to its magnetic properties, and GQD acts as a barrier. Furthermore, the current vs. voltage characteristics for both parallel (P) and anti-parallel (AP) MTJ junctions are estimated; as a result, the MTJ tunnel magnetoresistance (TMR) design is achieved at 1450 % at zero bias voltage. Besides, the effects of spin relaxation and magnetization relaxation are also investigated for expanding the lifetime of the spin. Thus, the stimulated setup outcome shows the effectiveness of the proposed MTJ structure for spintronics, and the results are compared with existing MTJ designs.