Abstract
We report a facile design of an ultra-thin broadband metamaterial absorber (MA) for C-band applications by utilizing a single layer of a metal-dielectric-metal structure of FR-4 substrate. The absorption performances are characterized using a numerical method. The proposed MA exhibits the broadband absorption response over the entire C-band spectrum range from 4.0 GHz to 8.0 GHz with absorptivity above 90% and the high absorptivity is remained over 80% for a large incident angle up to 40° under both transverse electric (TE) and transverse magnetic (TM) polarizations over the band. The origin of absorption mechanism is explained by the electric and surface current distributions, which is also supported by the retrieved constitutive electromagnetic parameters, significantly affected by magnetic resonance. In addition, compared with the previous reports, the proposed MA presents a greater practical feasibility in term of low-profile and wide incident angle insensitivity, suggesting that the proposed absorber is a promising candidate for C-band applications.
Highlights
R origin of absorption mechanism is explained by the electric and surface current distributions, which is supported by the retrieved constitutive electromagnetic parameters, significantly affected by
Compared with the previous reports, the proposed metamaterial absorber (MA) presents a greater practical feasibility in term of low-profile and wide incident angle insensitivity, suggesting that the proposed absorber is a promising candidate for C-band applications
We propose a facile design of ultra-thin broadband MA for C band applications by utilizing a single layer of a metal-dielectric-metal structure of FR-4 substrate
Summary
FbfoarrocCail-debbdaaennsddigamnpopeftliaacmantauiotltenrrsaia-tlhaibnsoLrbeEr Nguyen Thi Quynh Hoa[1], Tran Sy Tuan[1], Lam Trung Hieu1 & Bach Long Giang[2] IC We report a facile design of an ultra-thin broadband metamaterial absorber (MA) for C-band applications by utilizing a single layer of a metal-dielectric-metal structure of FR-4 substrate. T one uses the two-dimensional patterns of blending various unit cells of PA peak[2,3,4], while the other utilizes the stacking multilayer of metallic and dielectric[5,6,7,8] These approaches exhibit some disadvantages such as limitation of absorption bandwidth and sophistication of the fabrication process, prevent for real application. Loading with lumped elements on top surface of MA is proposed to Rextend the absorption band of such MAs14–17 This method is still required high cost and time consuming for manufacturing process. We propose a facile design of ultra-thin broadband MA for C band applications by utilizing a single layer of a metal-dielectric-metal structure of FR-4 substrate. Schematic of a unit cell of the proposed MA: (a) 3D-view, (b) top-view and (c) side-view and (d) its AR equivalent circuit model
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