RETRACTED ARTICLE: An analytical model for the effects of the variation of ferroelectric material parameters on the minimum subthreshold swing of NC-FETs

Abstract

The relationships between the coercive field (E C), remanent polarization (P 0), and thickness (t FE) of a ferroelectric material are derived analytically to determine the minimum subthreshold swing (S min) of a negative-capacitance field-effect transistor (NC-FET). The interdependence of the ferroelectric material properties is defined based on the capacitance matching condition in the subthreshold region of the NC-FET. An optimized combination of the parameters of the ferroelectric material in a gate stack is proposed to achieve transfer characteristics without hysteresis as well as lower subthreshold swing. The results are validated against numerical and experimental results available in literature. Furthermore, the minimum possible subthreshold swing (S min) is obtained for different ferroelectric materials used in the gate stack of an NC-FET in the context of a manufacturable semiconductor technology. The channel doping, ferroelectric thickness, and minimum subthreshold are calculated for five different ferroelectric materials.