Abstract
Retracted paper: The conventional material for the optical fiber communication laser diode is based on InGaAsP, which might be substituted by a potential candidate, InGaAlN. The new active region material, InN, is introduced regarding to its crystal growth and characterization, including the structural, optical and electrical properties. This material is promising for providing good performance of temperature stability of the wavelength. In addition, it is environmentally friendly.
Highlights
E During the last two decades, nitride semiconductors, such as GaN, InN, AlN and their alloys, have been attracting many researchers’ attention due to their prominent properties
Along with InGaAlN, it might be a good candidate for substituting InGaAsP for the laser diode for optical fiber communications
C region material for the structure of laser diode, as it is reported that InN has a better temperature stability of wavelength [1,2], which is of great importance for fabrication of laser diode
Summary
E During the last two decades, nitride semiconductors, such as GaN, InN, AlN and their alloys, have been attracting many researchers’ attention due to their prominent properties. InN is a very promising material for fabricating optical and electronic devices such as laser diodes, solar cells, and high electron mobility transistors. InNbased materials are free of toxic elements It is an extremely difficult material to grow due to the high equilibrium vapor pressure of nitrogen between. Since metalorganic vapor phase epitaxy (MOVPE) is a matured method for the large-scale production of semiconductor devices, it is of great importance to develop technologies for InN growth by MOVPE. The parameter window of InN growth in PR-MOVPE is investigated and is compared with that of other reactors. 1030 oC in NH3 (5 slm) for 5 min, followed by the direct growth of InN at the growth temperature varied from 500 to 700 oC.
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