Abstract
Lanthanum-substituted bismuth titanate (Bi3.25La0.75Ti3O12) (BLT) thin films were deposited on p-type Si(100) substrates using a chemical solution deposition process. The ferroelectric and dielectric properties of the films with an Au/BLT/Si structure were investigated. It was found that retention behaviors of the capacitors after polling with a negative and positive voltage were very different. The capacitor at an accumulation state exhibited a better retention characteristic than that at a depletion state. A rapid loss of memory for the capacitor at depletion state was found and attributed to the depolarization fields inside the ferroelectric film. It is proposed that the interaction between injected charges and ferroelectric polarization plays a role in the retention properties of the MFS capacitors.
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