Abstract
A significant retardation of transient enhanced diffusion of 5 keV boron implanted in silicon has been achieved when it was co-implanted with 1 MeV silicon. Almost complete retardation was observed when this was done in SOI substrates which isolate the layers containing most of the point defects due to the high energy silicon implant from the near surface regions. Measurements of the defect profile from the silicon implant using accurate Rutherford backscattering channelling analysis, coupled with high resolution SIMS analysis of the boron profile provide a comprehensive picture of the dopant/defects relationship. Other data from positron annihilation spectroscopy complete the picture for the vacancy-type defects, while data from spreading resistance measurements indicate the activation efficiency of the boron under these conditions. Other high energy implants were tested and a variety of SOI material was used to investigate the role of the depth of the barrier layer in retarding the TED.
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