RESTRUCTURING RESONANCE TUNNEL LEV-ELS DURING THE SUPERLATTICE FORMATION

Abstract

Reducing the active dimensions of semiconductor structures leads to the manifestation of new edge-mechanical phenomena. The characteristic sizes of structures at which these effects appear are 1…100 nm. In this range, quantum effects begin to fully manifest themselves, and the physics of conductivity is determined by the quantum mechanical interference of electron waves. It has been established that during the formation of a superlattice consisting of a sequence of potential wells and barriers, resonant levels arise, the energy of which is determined by the number of de Broglie waves that fit across the width of the well. For particles with energy equal to the energy of the levels, the transparency of the structure is equal to unity. As the number of units increases, these levels split into similar sublevels. The scheme and mechanism for rearranging levels in the chain are considered. This mechanism is based on ideas about the points of change in the phases of oscillator oscillations during the formation of a chain. It has been established that the parameters of these sublevels (energy, half-width and wave function) depend on the parameters of the barriers and the number of cells in the chain. A model is proposed that makes it possible to determine the characteristics of these sublevels, in particular their energy and wave functions.