Abstract
In this work the surface-barrier structures based on p-Si with different resistivity (ρ1 =24 Ohm∙sm, ρ2 = 10 Ohm∙sm) were made and their electrophysical characteristics were investigated under the influence of X-rays. It is shown that depending on the defect structure of silicon substrate, the action of irradiation leads to generation of new defects or changing of charge state of existing defects. Consequently, the mechanism of current transfer in irradiated structures changes.
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