Abstract

åž‚ç›´å¤–è ”é¢å‘å°„æ¿€å ‰å™¨ï¼ˆVertical external cavity surface emitting laser,VECSELï¼‰çš„ä¾§å‘æ¿€å°„æ˜¯åˆ¶çº¦å ¶é«˜æ€§èƒ½å·¥ä½œçš„å ³é”®ã€‚æˆ‘ä»¬è®¾è®¡äº†å®¤æ¸©ä¸‹é‡å­é˜±å¢žç›Šå³°ä¸Žè¡¨é¢è ”æ¨¡å¤§å¤±é ï¼ˆ30 nmï¼‰çš„å¢žç›ŠèŠ¯ç‰‡ç»“æž„ï¼Œå¹¶è¯å®žè¯¥ç»“æž„å¯ä»¥æœ‰æ•ˆæŠ‘åˆ¶æ³µæµ¦åŠŸçŽ‡å¢žåŠ æ—¶VECSEL的侧向激射增强问题。增益芯片基底温度为20 ℃时,VECSEL正向激射波长位于980 nm,侧向激射波长位于950 nmï¼Œå½“æ³µæµ¦åŠŸçŽ‡é€æ­¥å¢žåŠ æ—¶ï¼Œä¾§å‘æ¿€å°„å¼ºåº¦éšç€æ­£å‘æ¿€å°„çš„å‡ºçŽ°è€Œè¿ é€Ÿé™ä½Žã€‚è¿™æ˜¯å› ä¸ºæ¿€å ‰æ­£å‘æ¿€å°„æ—¶é‡å­é˜±çš„å—æ¿€è¾å°„èƒ½çº§ä¸Žæ­£å‘æ¿€å°„æ¿€å ‰æ¨¡å¼åŒ¹é ï¼Œæ­£å‘æ¿€å°„çš„æ¿€å ‰æ¨¡å¼å¯ä»¥èŽ·å–æ›´é«˜çš„æ¨¡å¼å¢žç›Šï¼Œåœ¨ä¸Žä¾§å‘æ¨¡å¼çš„ç«žäº‰ä¸­å¤„äºŽä¼˜åŠ¿åœ°ä½ã€‚å½“åŸºåº•æ¸©åº¦æŽ§åˆ¶åœ¨0 ℃与10 â„ƒæ—¶ï¼Œé‡å­é˜±æœ¬å¾å¢žç›Šå³°å€¼ä¸Žè¡¨é¢è ”æ¨¡å¤±é åº¦å¢žå¤§ï¼Œæ­¤æ—¶VECSEL仍然表现出稳定的侧向激射抑制效果。

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