Restoration of depth profiles of impurity atoms in solids based on yields of ion-excited X-rays

Abstract

The procedure for restoring the depth-concentration profiles of elements on the basis of an angular dependence of the yield of X-rays excited by accelerated ions, which had been put forward earlier, has been used to determine in-depth distributions of various impurity atoms in a silicon matrix. The procedure is based on the solution of a set of linear equations with unknowns c( x)( c( x) being the element's mean concentration within the layer located at depth x form the sample surface). To stabilize the solutions a numerical technique using some a priori restrictions imposed on c( x) has been used. The depth-concentration distributions of Ga, Ge, As and Se atoms in a silicon matrix have been obtained.