Abstract
In this paper, 2D Al grating structure were designed on the Silicon microbolometer for the responsivity enhancement. The Al connection layer in the standard CMOS process is designed as a grating structure and integrated with Silicon microbolometer. The grating changes the electric field distribution to improve infrared absorptivity of the microbolometer. The FDTD simulation results show that the 2D Al grating can improve the absorptivity of the microbolometer at the wavelength of 7-13 μm and the average increased percentage is 29.26%. The experimental results show that the responsivity of the detector integrated with the 2D Al grating structure can be significantly improved. The enhancement of the responsivity can reach the maximum of 20.49% and 20.50 at 8.33 μm and 12.20 μm, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
