Abstract
This paper presents a detailed calculation of the responsivity in a SiGeSn/GeSn inter-band multiple quantum well infrared photodetector (MQWIP). The photogenerated current is obtained by the solving rate equation at steady state considering the inter-well carrier transport mechanism in MQWIPs. The responsivity is studied as a function of variation of bias, number of wells, well width, and carrier transfer parameters such as capture probability and escape rate. Results show that a significant responsivity in the order of mA/W is obtained for a particular choice of the number of wells and applied bias. This work also reveals that the number of wells in the device that can be used to enhance responsivity is limited by the carrier capture probability.
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