Response of thermo-mechanical waves of an excited microelongated semiconductor layer according to photothermal transport processes

Abstract

A novel mathematical-physical governing equations of microelongated semiconductor are presented. According to the photo-generated transport processes the model is studied when the microelongated elastic semiconductor medium is excited. The main governing equations display the interaction between elastic-thermal-plasma waves when the microelongation is taken into account. In this context, the generalized photo-thermoelasticity theory is considered. The dimensionless expressions for temperature, carrier density, displacement, stresses and microelongation distributions have been converted using the harmonic wave technique. During the electronic and thermoelastic deformation processes in two-dimensional (2D) the general solutions of the main distributions are obtained. Some thermal-mechanical loads and plasma conditions are applied when the semiconductor medium is isotropic, homogeneous, and linear. In order to display the obtained results, a numerical simulation for silicon (Si) as semiconductor material is carried out. The variations of the wave propagations of main physical fields have been depicted graphically.