Abstract
Three-layer SrRuO3/SrTiO3/SrRuO3 heterostructures were grown by laser evaporation on (110)LaAlO3 substrates. Photolithography and ion etching are used to form plane-parallel film capacitors, in which a layer of strontium titanate is placed between two film electrodes of strontium ruthenate. Data on the structure and orientation of the intermediate SrTiO3 layer in the grown heterostructures were obtained. The variation of the dielectric constant and dielectric loss of the SrTiO3 intermediate layer upon varying the temperature and intensity of an external electric field was studied.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
