Abstract
In this work we have studied the direct detection and spectrometric capabilities of low-cost commercial silicon photodiodes for X- and γ-rays (energies from 10 up to 80 keV) envisaging their use in characterization of porous microstructures by X-ray microtomography. The best values of the energy resolution for the 59.5 keV 241Am γ-ray line, measured at room temperature, were found to be 2.1 and 1.8 keV for SFH00206 K (Siemens) and S2506-04 (Hamamatsu) PIN diodes, respectively.
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