Response of a semiconducting infinite medium under two temperature theory with photothermal excitation due to laser pulses

Abstract

A novel model of two-dimensional deformations for two-temperature theory at the free surface under the excitation of thermoelastic wave by pulsed laser for a semi-infinite semiconducting medium is studied. The effect of mechanical force during a photothermal process is investigated. The mathematical methods of the Lord–Shulman (LS includes one relaxation time) and Green–Lindsay (GL with two relaxation times) theories as well as the classical dynamical coupled theory (CD) are used. An exact expression for displacement components, force stresses, carrier density and distribution of temperature are obtained using the harmonic wave analysis. Combinations of two-temperature and photothermal theories are obtained analytically. Comparisons of the results are made between the three theories also. The effects of thermoelectric coupling parameter, two-temperature parameter on the displacement component, force stress, carrier density, and distribution of temperature for silicon (Si) medium have been illustrated graphically. The variations of the considered variables with the horizontal distance have been discussed.