Abstract
We have studied a silicon semiconductor detector as an alternative to commercial 3He-gas-based neutron detectors. In this paper, we present a measurement of the energy spectrum of neutron-induced secondary radiation by using a silicon detector. Polyethylene was used to produce thermal neutrons by using a 252Cf radioactive source. The photodiode was then irradiated by thermal neutrons, followed by a 10B converter that produced charged particles. This configuration was found to have a better response to neutrons than a moderator-converter-photodiode configuration. By comparing the measurements with Geant4 simulations, the air gap between the photodiode and the converter was determined to be 0.3 mm and the detector response of the semiconductor device was found to be a smeared Gaussian function with σ = 0.1.
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