Abstract

For the base-in-well bipolar magnetotransistor, a computer simulation is conducted in conjunction with an experiment. The following points are made: (i) Bulk recombination is important in the response of the device to an applied magnetic field. (ii) The device shows threshold behavior. (iii) The relative magnetic-field sensitivity of collector current is dependent on the applied magnetic flux density; moreover, the former grows in magnitude with decreasing flux density if this is sufficiently low. (iv) The relative sensitivity changes sign as the base bias is varied. A maximum relative sensitivity of about 2000 T−1 is achieved in measurements of the earth’s magnetic field.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.