Abstract
Large polarization-dependent resonance enhancement is observed in first and second order Raman scattering in multiple quantum well GaAs (Al xGa 1−x)As and GaAs AlAs semiconductor heterostructures. Resonance enhancement is much stronger in the forbidden polarization than in the allowed and shows double resonance behaviour at incoming and outgoing photon energies. The resonance is stronger at incoming photon energies for one-phonon scattering and at outgoing photon energies for two-phonon scattering.
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