Abstract
We have studied generation of visible photoluminescence (PL) in porous silicon (PSi) under resonant two-photon excitation. While the temporal decays of the resonant photoluminescence excited by one- and two-photon absorption are identical and show the same temperature dependence, the PL response differs significantly near the excitation energy. Contrary to one-photon excitation, no spectral gap between the excitation energy and the onset of the two-photon excited PL is observed. This is explained in the framework of selection rules for dipole allowed and forbidden optical exciton transitions in silicon nanocrystals.
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