Abstract
Resonant tunnelling light-emitting diodes (RTLEDS) are p-i-n diodes containing a double-barrier (or multi-barrier) resonant tunnelling structure in the intrinsic region of the diode. The simultaneous intraband tunnelling of electrons and heavy holes gives rise to injection electroluminescence from the quantum well and from the two accumulation layers on either side of the resonant tunnelling structure. The fast transient phenomena in these structures give rise to a fast response of the optical output otherwise only found in semiconductor lasers. Important aspects of the bipolar diode like speed and charge dynamics will be discussed.
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Schedule a callMore From: Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences
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