Abstract
A new negative differential resistance field-effect transistor concept, based on resonant tunnelling, is demonstrated. The gate of this novel device consists of an AlAs/GaAs double barrier. The drain current against drain and gate voltages exhibit a peak due to the quenching of the resonant tunneling gate current. Thus, in addition to negative conductance, this structure exhibits negative transconductance, a uniquie feature in an n-channel device.
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