Resonant tunneling through a double GaAs/AlAs superlattice barrier, single quantum well heterostructure

Abstract

Resonant tunneling has been demonstrated through a double barrier, single quantum well heterostructure in which the barriers have been replaced by thin, short period binary superlattices. The superlattice structure does not exhibit the asymmetry around zero bias in the electrical characteristics normally observed in the conventional AlxGa1−xAs barrier structures, suggestive of reduced roughness at the inverted interface by superlattice smoothing. The structure exhibits an anomalously low barrier height and a peak to valley tunnel current ratio of 1.8:1 at 300 K.