Resonant-tunneling structure of quantum wells in the p-i-n photovoltaic element

Abstract

The method for efficient separation of photoexcited carriers, based on the resonant tunneling phenomenon in the quantum well structure placed into the i-region of the p-i-n photovoltaic element, is proposed. The parameters of quantum well structures based on the GaAs/Ga1−xInxAs system, implementing the mode of sequential resonant tunneling in the electric field of the GaAs p-i-n junction, is calculated. A microscopic model of resonant-tunneling transport in such structures is constructed, and the kinetic tunneling times are calculated depending on well and barrier parameters. The possibility of achieving sufficiently short (<∼10 ps) tunneling times and, hence, quite efficient removal of photoelectrons and photoholes from quantum wells at a proper choice of barrier powers is shown.