Abstract
A new method to detect deep centers close to the interface in metal-semiconductor contacts is reported. The presence of humps in the logIF- VF characteristics attributed to resonant tunneling contributions to the total forward current is investigated via the slope changes in the logIF- VF plots. Although the relation between the voltage VFm at which the minimum of d2 logIF/ dV2F occurs, and the energy position of the levels causing the resonant tunneling current is not easy to calculate, this new method represents a powerful means to detect traps lying near the interface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
