Abstract
Current-voltage characteristics of Ga0.99In0.01As tunnel diodes are studied experimentally and theoretically. Three possible tunneling mechanisms are considered: direct band-to-band tunneling, phonon-assisted tunneling through defects, and resonant tunneling through defects. Comparison between theoretical results and experimental data reveals resonant tunneling through oxygen-related defects as the dominant transport mechanism at voltages corresponding to the peak current in diodes with doping level about 1019cm−3.
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