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Abstract
Metallic nanoshells have proven to be particularly versatile, with applications in biomedical imaging and surface-enhanced Raman spectroscopy. Here, we theoretically demonstrate that hybrid phonon-plasmon modes in semiconductor nanoshells offer similar advantages in the terahertz regime. We show that, depending on tm,n,nhe doping of the semiconductor shells, terahertz light absorption in these nanostructures can be resonantly enhanced due to the strong coupling between interface plasmons and phonons. A threefold to fourfold increase in the absorption peak intensity was achieved at specific values of electron concentration. Doping, as well as adapting the nanoshell radius, allowed for fine-tuning of the absorption peak frequencies.
Highlights
Light manipulation by semiconductor devices in the terahertz (THz) regime remains a challenge, despite its technological importance
At around Ne ~ 3 × 1018 cm−3, the interface phonon–plasmon coupling was enhanced through the interaction with the single interface plasmon branch
GaAs-like at the InAs/GaAs interface and InAs-like at the InAs/Hexane interface) hybridized with two interface plasmon branches at the GaAs/InAs and InAs/Hexane interfaces. This led to five coupled phonon–plasmon branches
Summary
Light manipulation by semiconductor devices in the terahertz (THz) regime remains a challenge, despite its technological importance. R.D. et al [20] and Oldenburg, S.J. et al [21] investigated optical properties of nanoshells with a core diameter ranging from 120 to 340 nm and metallic shell thickness from 14 to 48 nm. Investigation of the optical properties of Au nanoshells with Cu2 O, SiO2 , or iron oxide core [15] demonstrated that a change in the core dielectric constant significantly affected both plasmon energies and absorption efficiency. The intrinsic charge carrier concentration in GaAs is negligibly small (106 cm−3 ) In both cases, the plasmon energy is much smaller than the interface phonon energies (25 to 30 meV), and, the phonon and plasmon systems are decoupled. The electron doping of the semiconductor core or shell affects the vibrational spectrum of the nanostructure and enhances the response of the system to electromagnetic radiation.
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