Abstract
We propose a silicene-based lateral resonant tunneling device by placing silicene under the modulation of top nonmagnetic/ferromagnetic/nonmagnetic sandwich nanogates. Following the electric-tunable bandgap of silicene, lateral double-barrier structure is formed by imposing the flexible electrostatic modulation on top gates. By aligning the spin and valley-resolved confined states in magnetic well, remarkable spin/valley polarization can be accessed through spinor-relying resonant tunneling mechanism. Under the electrostatic, magnetic, and size manipulation, the confined well state can be efficiently engineered, and the observed spin and valley polarization can be further flexibly tuned, offering some helpful strategies to construct spinor-electronic logic atomically.
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