Abstract

Resonant soft X-ray emission (RSXE) spectra of V2O3, VO2and NaV2O5were recorded for a series of excitation energies at resonances of the V L- and O K-absorption band. The V L- and O K-emission in these vanadium oxide bands possess considerable overlap. By resonant excitation we can tune the energy to the absorption thresholds, thereby eliminating this overlap. Hereby we obtain the V 3d and O 2p projected density-of-states of the valence band. Resonant inelastic X-ray scattering (RIXS) is found to be weak in V2O3, which we explain as being due to its metallic character at room temperature. Vanadium dioxide ( VO2), semiconducting at room temperature, shows considerable RIXS features only at the O K-emission band. Distinct RIXS structures are visible in the RSXE spectra of the insulator NaV2O5. In the emission spectra excited at the V L-thresholds of this ternary vanadium oxide, dd-excitations of the V dxysubband at an energy loss of -1.7 eV are observed. Our observation, that RIXS is stronger for insulators than for metals, should be taken advantage of for studying insulator-to-metal transitions in vanadium compounds in the future.

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