Abstract
We present results of a one-dimensional tunneling model used to predict the scanning tunneling spectrum of a quantum well. The current-voltage ( I– V) spectrum displays characteristic steps, corresponding to the lower-lying resonances of the quantum well. The spectrum is compared to the closely related double-barrier resonance tunneling diode. We discuss the sensitivity of the predicted ( I– V) curves to the parameters of the potential, as well as the optimal conditions for observing a resonance. We argue that these steps in the ( I– V) curve may be used as a sensitive probe of the lateral uniformity of buried semiconductor heterostructures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.