Abstract
We present results of a one-dimensional tunneling model used to predict the scanning tunneling spectrum of a quantum well. The current-voltage ( I– V) spectrum displays characteristic steps, corresponding to the lower-lying resonances of the quantum well. The spectrum is compared to the closely related double-barrier resonance tunneling diode. We discuss the sensitivity of the predicted ( I– V) curves to the parameters of the potential, as well as the optimal conditions for observing a resonance. We argue that these steps in the ( I– V) curve may be used as a sensitive probe of the lateral uniformity of buried semiconductor heterostructures.
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