Abstract
We have studied the stoichiometry of cerium oxide films deposited by RF sputtering on sapphire and MgO as a function of deposition conditions using the resonant Rutherford backscattering method. We found that some films have the off-stoichiometry of CeO/sub y/ with y greater than 2.0. Such an off-stoichiometry cannot be due to a mixture of the known phases of bulk cerium oxide samples. This may be due to either cerium vacancies or interstitial oxygen atomic impurities. The cerium ion X-ray photoemission spectra of those films cannot determine the vacancy of the cerium ions. The c-axis YBaCuO thin films deposited by sputtering on the CeO/sub 3.3/ buffer layer on sapphire was found to be epitaxial. The T/sub c/ was 86 K with /spl Delta/ T/sub c/ less than 1 K.
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