Abstract
A Raman scattering cross section for stage-1 graphite acceptor intercalated compounds is calculated within a two-dimensional tight-binding electronic band model. It is shown that the two-band resonant Raman scattering process is much more efficient than the possible three-band process. The experimental results on stage-1 C-${\mathrm{AsF}}_{5}$ are fitted to the two-band model and the fitting procedure yields the threshold for the valence- to conduction-band transition ${\ensuremath{\omega}}_{T}$=2.45 eV, and the broadening constant \ensuremath{\Gamma}=0.02 eV.
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