Resonant Raman Scattering in GaAs-AlAs Multiquantum Wells Under Magnetic Fields

Abstract

Resonant Raman Scattering (RRS) in semiconductor superlattices (SL) and multiquantum wells (MQW) has been extensively studied in recent years in order to obtain information on different aspects of their electronic structure, as well as on their phonon properties. Thus, RRS has been used, among other methods, to investigate the two-dimensional character of excitons in SL’s and MQW s1, the degree of localization of electron and hole wave functions2, the effect of the lattice mismatch-induced strain on electronic states of higher gaps3 and the electric field effect on the resonance energies and probabilities, including the appearance of initially forbidden transitions.4 As far phonons are concerned, extensive work has been done on confined longitudinal optical (LO) modes in GaAs-Alx Ga1-x As and GaAs-AlAs systems,5 as well as folded acoustic modes6 and interface modes,7–10 including sometimes their resonant behavior. A recent and comprehensive review on light scattering in MQW and SL’s can be found in Ref. 11.