Abstract
We report a study of the resonant Raman scattering (RRS) by optical phonons that is induced by excitons bound to isoelectronic nitrogen impurities in GaAs1-xPx:N alloys. Under resonant excitation into Nx band, strong Raman lines involving allowed LO and "forbidden" TO for backscattering configuration from (100) surface are observed. This is interpreted as the breakdown of normal selection rule in the RRS process. By following the temperature dependence of the Nx luminescence and its phonon sidebands, we also separate RRS from sharp line due to luminescence.
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