Abstract
Carbon-doped AlAs grown by solid source molecular beam epitaxy has been studied by Raman and photoluminescence spectroscopy. Doping levels exceeding 2×1019 cm−3 have been obtained using a heated graphite filament as the carbon source. For excitation just above the AlAs E0 band-gap energy radiative recombination is observed across that band gap, which involves nonthermalized photogenerated electrons occupying the Γ-conduction-band minimum rather than the lowest indirect X minima. Raman spectra excited in resonance with the E0 band gap show a hole-plasmon-longitudinal-optical-phonon coupling similar to that found in p-type GaAs. Resonantly excited Raman spectra further reveal a vibrational mode at ≂635 cm−1, which is assigned to the local vibrational mode of the CAs acceptor in AlAs.
Published Version
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