Abstract
The energy distribution of the 4 f partial density of states has been measured on CeCu 2 and CeCu 2 Si 2 by means of the 4 d -4 f resonant photoemission. In CeCu 2 , states with the 4 f character are distributed all over the valence band forming a major peak at 2.3 eV below the Fermi edge; the Ce 5 d band exists near the Fermi level where the fractional density of the states with the 4 f character is low. In CeCu 2 Si 2 , the 4 f band spreads over the range within 3.5 eV from the Fermi edge with a few fine structures and does not form a prominent peak; the 4 f partial density of states at the Fermi level is much higher than those in CeCu 2 and CeCu 6 . Such aspects suggest a large hopping matrix element between the 4 f level and the conduction states, as is consistent with the heavy-fermion superconductivity in CeCu 2 Si 2 .
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