Abstract
In this study, the resonant peaks of the linear optical absorption (OA) and rectification coefficients in GaAs/GaAlAs quantum well are calculated as dependent on the applied electric field (F), the magnetic field (B) and the laser field intensity parameter (α0). Our results show that the shape of confined potential profile, the energy levels and the dipole moment matrix elements are changed as dependent on the F, B and α0. Also, the resonant peaks of the OA and rectification coefficients depend on the applied external field effects. Therefore, the variation of the resonant peaks of these coefficients which can be appropriate for various optical modulators and infrared optical device applications can be smoothly obtained by the alteration electric, magnetic and intense laser field.
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