Abstract
We have investigated magnetoconductance in a two-dimen- sional lateral-surface superlattice on modulation-doped GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As heterostructure, at 50 mKT1.5 K and 0B13.5 T. The superlattice potential modulation is formed and controlled by a metal grid gate with 200-nm periodicity. This modulation can be made larger than the Fermi energy and cyclotron energy depending on the grid-gate bias. Conductance oscillations as a function of gate bias in the presence of a magnetic field have been observed. The magnetic-field dependence of the amplitude and position of the oscillations indicates that the effect of the magnetic field is to sharpen the superlattice potential modulation.
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