Abstract
We have considered the resonant Josephson tunneling in SIS junctions with a localized state in the interlayer for an arbitrary relation between the width of the resonant level and the superconducting gap and for arbitrary barrier thickness. The analysis was carried out in the framework of the Bogolubov-de Gennes equations. For the case of short junctions and high barriers our results coincide with the results of Beenakker and van Houten theory. The obtained results can be applied for explanations of the properties of HTS Josephson junctions.
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