Abstract
Soft ultraviolet laser desorption of neutral and ionized Si atoms was investigated at 355 nm for fluences ranging from the desorption threshold (85 mJ/cm2) up to 165 mJ/cm2. The sensitivity of resonance ionization mass spectrometry enabled the number of sputtered particles to be studied at a very low emission level corresponding to only several 100 atoms. For such a low emission yield, the ejected atoms keeps the memory of the laser–surface interaction mechanism during their flight in the ultrahigh vacuum condition. The velocity distribution of neutrals was measured for different fluences and were well fitted by a set of 2 Maxwellian functions at each fluence. From these fits it appears that the primary mechanisms involved in laser desorption are both a thermal process and an electronic one.
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