Abstract
Simple modifications of the standard GaAsGaAlAs double barrier tunneling diode and quantum well laser structures are considered. Calculations show that by replacing the outer GaAs layers of the diode by small aluminum concentration GaAlAs, the peak-to-valley ratio of the negative resistance can be increased. A similar structure is formed if thin high aluminum content barriers are added on one or both sides of the quantum well in a quantum well laser. The barriers then create a resonance in the well region. The alloy concentration outside of the barriers can be chosen to line up the incoming electron energy with the resonance, creating a greatly enhanced charge density in the well. Electrons are thereby captured by the well more efficiently and threshold currents may be lowered.
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