Abstract
Theoretical treatment of resonant hyper-Raman scattering of light by LO phonons in wurtzite semiconductors is given. The hyper-Raman process was considered for the scattering geometry y(xxz)x at which it involves the two-photon transitions to the B and C excitons of the s-type. Allowance was made for different sequences of intermediate virtual states. On the example of a CdS crystal the influence of the possible dipole transitions to the deeper valence band on the frequency dependence of the scattering cross section was investigated.
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