Abstract
The effect of pressure on electrical properties of the n-Pb1−x SnxTe alloy (x = 0.21) doped with gallium is studied. A decrease in the free-electron concentration with increasing temperature and an increase in this concentration with increasing pressure are observed; these observations indicate that the Fermi level is pinned at the resonant gallium level. The two-band Kane’s dispersion law and experimental data were used to calculate the pressure dependences of the electron concentration and Fermi level. A diagram of transformation of the charge-carrier energy spectrum in Pb1−x SnxTe:Ga subjected to pressure is suggested; the rate of the shift of the gallium resonant level in reference to the midgap under the effect of pressure is determined.
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