Resonant electronic Raman scattering in a Van Vleck II-VI diluted magnetic semiconductor:Cd1−xFexTe

Abstract

The Van Vleck paramagnetism of ${\mathrm{Cd}}_{1\ensuremath{-}x}{\mathrm{Fe}}_{x}\mathrm{Te}$, a diluted magnetic semiconductor, is explored with electronic Raman spectroscopy of an internal transition of ${\mathrm{Fe}}^{2+}$, on the one hand, and the spin-flip Raman scattering (SFRS) from donor-bound electrons, on the other. Zeeman splitting of the Raman transition from the nonmagnetic ground state to the first excited state displays patterns consistent with energy levels responsible for the Van Vleck paramagnetism. SFRS, in turn, delineates characteristic features of the Van Vleck magnetization, as expected from $s\text{\ensuremath{-}}d$ exchange interaction. The combination of SFRS and magnetization measurements yielded the $s\text{\ensuremath{-}}d$ exchange constant in ${\mathrm{Cd}}_{1\ensuremath{-}x}{\mathrm{Fe}}_{x}\mathrm{Te}$, $\ensuremath{\alpha}{N}_{0}=244\ifmmode\pm\else\textpm\fi{}10\phantom{\rule{0.3em}{0ex}}\mathrm{meV}$.