Abstract
We study the Josephson effect in ballistic double-barrier SINIS planar junctions, consisting of bulk superconductors (S), a clean normal metal or semiconductor (N), and insulating interfaces (I) modeled as a δ-function potential-energy barriers. We solve the scattering problem based on the Bogoliubov-de Gennes equations and derive a general expression for the dc Josephson current, valid for arbitrary interfacial transparency, the Fermi wave vectors mismatch, and for different effective band masses. The effect of transmission resonances on the Josephson current and on the normal conductance is analyzed for short junctions. Curvature of the temperature dependence of the critical Josephson current is related to the presence of resonances at the Fermi level and to the interfacial transparency. For thin semiconductor layers with negative effective masses of the carriers, finite interfacial transparency and large Fermi wave vectors mismatch we find that an unusual and significant enhancement of both the normal conductance and the critical Josephson current occurs at low temperatures due to the presence of an evanescent mode localized at interfaces.
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