Resonant Detection and Mixing of Terahertz Radiation by Induced Base Hot Electron Transistors

Abstract

The harnessing of induced base hot electron transistors (IBHETs) with high mobility of electrons in the base as detectors and mixers of electromagnetic radiation in the range of terahertz frequencies is proposed. The theory of physical effects associated with the operation of detectors and mixers based on IBHETs is developed. It is shown that the resonant excitation of the standing plasma waves in the IBHET base is possible under the influence of high-frequency electromagnetic signals. At resonant frequencies the amplitude of the base potential oscillation significantly exceeds the amplitude of incoming signals provided the electron mobility is high enough. This results in the IBHET responsivity at resonant frequencies much higher than that of Schottky diodes. For IBHETs with micrometer or near submicrometer lateral sizes the resonant frequencies fall into the terahertz range. The resonant frequencies are tuned by biasing voltages.