Abstract
The resonant coherent excitation from a 1s state to n=2 states of 94 MeV/u Ar17+ ions channeling in the (22̄0) plane of a Si crystal was observed as the decrease of the survival fraction of Ar17+. Three resonance dips of survival fraction were clearly seen. The resonance profile is attributed to the spin–orbital interaction, the position-dependent Stark effect, the position-dependent transition probability and the position-dependent ionization probability of excited states. The estimated experimental resolution of measurement of the resonance profile is comparable to the width of the narrowest resonance dip (∼1.5 eV FWHM) or less.
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