Abstract
The resonant response of the complex x-ray scattering factor has been used in conjunction with the coherent Bragg rod analysis phase-retrieval algorithm to determine the composition and strain profiles of ultrathin layers of GaAs grown on InGaAs buffers. The buffer layers are nominally latticed matched with the InP substrate and the subsequent GaAs growth is compared at two different temperatures: 480 and 520°C. We show that electron density maps extracted from Bragg rod scans measured close to the Ga and As K-edges can be used to deconvolute roughness and intermixing. It is found that indium incorporation and roughening lead to a significant reduction of the strain in this system.
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