Resonant cavity light-emitting diodes at 660 and 880 nm

Abstract

Resonant cavity light-emitting diodes (RCLEDs) operating at λ≅660 nm and λ≅880 nm have been fabricated and studied. The RCLED layer structures consisted of 1− λ thick cavities sandwiched between AlGaAs distributed Bragg reflectors. The cavities were detuned to improve temperature stability and light extraction. The temperature induced red-shifts in the peak emission wavelength were found to be 0.14 and 0.22 nm °C −1 for the 660- and 880-nm devices, respectively.